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Comparative FEA Results of Si MOSFETs with and without Al Pads and Modeling Approach Proposals
Korean International Semiconductor Conference on Manufacturing Technology (KIMS)
DOE κΈ°λ° μμ΄μ΄ μ§κ²½ λ° λ€μ΄ κΈ°μΈκΈ°κ° Si-IGBTμ μ΄ λ° μ κΈ°μ μ±λ₯μ λ―ΈμΉλ μν₯μ κ΄ν μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
FTIR λ° κΈ°κ³νμ΅μ νμ©ν SiNμ λ―ΈμΉλ λ°©μ¬μ μν₯ λΆμ
νκ΅λ°λ체νν μ 30ν νκ΅λ°λ체νμ λν
Numerical Analysis Study of Changes in Electrical and Thermal Properties of Hermetic Package for RF Devices Due to Process Variation
νκ΅μ κΈ°μ μμ¬λ£νν νκ³νμ λν
Numerical Evaluation of P-Channel MOSFETs Depending on the TID Effect Using Electric-Thermal Analysis
EuroSimE 2024
Numerical investigation of GaN HMET Using Finite Element Method according to Process Parameters
νκ΅λ°λ체νν μ 30ν νκ΅λ°λ체νμ λν
Wire Bonding λκ»λ³νμ Die-attach Voidμ λ°λ₯Έ μ΄ μ ν λ³ν μ°κ΅¬
νκ΅λ°λ체νν μ 30ν νκ΅λ°λ체νμ λν
κ³ μ λ ₯ IGBTμ μ΄-μ κΈ° ν΄μ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
κΈ°κ³νμ΅κ³Ό FTIR μ€ννΈλΌ λΆμμ νμ©ν λ°©μ¬μ μ μν SiN ννμ λ³ν νλ³ μ°κ΅¬
νκ΅μ κΈ°μ μμ¬λ£νν νκ³νμ λν
λ§μΆ€ν μμ κ±° μ μμ μν μ 체 μΉμμ λ°λ₯Έ μ νμμν΄μ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ΄-μ κΈ° ν΄μμ μ΄μ©ν DBCꡬ쑰 ν¨ν€μ§μ μ΄νΉμ± λΉκ΅
νκ΅μ κΈ°μ μμ¬λ£νν νκ³νμ λν
μ ν μμ ν΄μμ μ΄μ©ν Via ννμ λ°λ₯Έ ν¨ν€μ§ μ΄νΉμ± λΉκ΅
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ νμμν΄μμ νμ©ν κ³ μ λ ₯ IGBT ν¨ν€μ§ λΉκ΅ λΆμ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ λ ₯ λ°λ체 ν¨ν€μ§μ μ λ’°μ± λΆμμ μν Al κΈμν μΈ΅ λͺ¨λΈλ§ λ° μ ν μμ ν΄μ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ λ ₯λ°λ체 ν¨ν€μ§ λ€μ΄ μ΄νμΉ Tiltμ μν μ΄-μ κΈ° μ νμμν΄μ μ°κ΅¬μ λ ₯λ°λ체 ν¨ν€μ§ λ€μ΄ μ΄νμΉ Tiltμ μν μ΄-μ κΈ° μ νμμν΄μ μ°κ΅¬
νκ΅μ κΈ°μ μμ¬λ£νν νκ³νμ λν
μ§λ λ°μ΄ν°λ₯Ό νμ©ν κΈ°κ³νμ΅ κΈ°λ° κ° νΈλ¦¬ ν¬λ μΈ κΈ°μ΄λ°μ€ κ³ μ₯ μμΈ‘ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
MOSFET ν¨ν€μ§μ μν Cu ν΄λ¦½ λ° AI μμ΄μ΄ λ³Έλ©μ μμΉ ν΄μ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
Numerical analysis of thermal properties of HEMT due to voids using finite element method
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
TIDν¨κ³Όμ μν P-MOSFETμ μ΄μ ν μμΉ ν΄μ μ°κ΅¬
μ 1ν μ°μ£Όνμ λν
κΈ°κ³νμ΅ λ΄ λ°μ΄ν° μ μ²λ¦¬ κΈ°λ²μ λ°λ₯Έ κΈ°μ΄ μμ νλ³ μν₯ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
κΈ°κ³νμ΅μ μ΄μ©ν EMCμ TID μν₯μ λ°λ₯Έ μ΄ν λΆμ μ°κ΅¬
μ 1ν μ°μ£Όνμ λν
μ΄-μ κΈ° Multi Physic ν΄μμ μ΄μ©ν Power MOSFET λ°λ체μ μ΄ μ ν μ°μΆ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ΄-μ κΈ° ν΄μμ μ΄μ©ν Power MOSFET ν¨ν€μ§λ³ μ΄νΉμ± λΉκ΅
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ ν μμλ²μ μ΄μ©ν Power MOSFETμ Mesh Resolution μ€μ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ νμμλ²μ μ΄μ©ν Hermetic Packageμ 곡μ λ³μ λ³νμ λ°λ₯Έ μ΄ νΉμ± μμΉ ν΄μ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ λ ₯λ°λ체 ν¨ν€μ§ λ° Die-attach voidμ λ°λ₯Έ μ΄μ ν λΉκ΅
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
ν¨ν€μ§ μ νμ λ°λ₯Έ Power MOSFETμ μ΄μ νμ λν μμΉ ν΄μ νκ°
λνμ κΈ°νν νκ³ νμ λν
Chip packaging interaction of SiC junction barrier schottky diode packages
The 7th International Conference on New Energy and Future Energy Systems
FTIR μ€ννΈλΌκ³Ό κΈ°κ³νμ΅μ μ΄μ©ν EMC μμ¬μ λ°©μ¬μ μ΄ν νλ³
λνμ κΈ°νν
TO-247λ‘ ν¨ν€μ§ λ μΌνΈν€ λ² λ¦¬μ΄ λ€μ΄μ€λμ λ¨μ κ°λ μνμ μ ν μμ ν΄μ
νκ΅κΈ°κ³κ°κ³΅νν.
κ΅λ΄ HVDC νν©μ ν΅ν κ°λ° λ°©ν₯μ κ΄ν μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν.
λ°©μ¬μ μ‘°μ¬λμ λ°λ₯Έ μ€λ¦¬μ½ μ₯μ¬μ΄λμ κΈ°κ³μ μ±μ§ λ³ν
νκ΅κΈ°κ³κ°κ³΅νν.
μ ν μμ λ²μ μ΄μ©ν Hermetic Packed Power MOSFETsμ λ±κ° μ΄μ ν μ°μΆ
νκ΅κΈ°κ³κ°κ³΅νν.
μ ν μμ λ²μ μ΄μ©ν λ°©μ¬μ μ‘°μ¬μ λ°λ₯Έ μ λ ₯ MOSFETμ λ±κ° μ κΈ° μ νλ₯ κ³Ό λ±κ° μ΄ μ λμ¨ μ°μΆ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ ν μμ ν΄μμ μ΄μ©ν Power MOSFET ν¨ν€μ§ μ’ λ₯μ λ°λ₯Έ λ°λ체μ μ΄ μ ν μ°μΆ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ ν μμ ν΄μμ μ΄μ©ν λ€μ΄ λ³Έλ© λ°©λ²μ λ³νμ λ°λ₯Έ Power MOSFET μ΄ μ ν μ°μΆ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
μ νμμλ²μ μ΄μ©ν TO-220 μΌνΈν€ λ² λ¦¬μ΄ λ€μ΄μ€λμ λ¨μ κ°λ μ€ν
λνμ κΈ°νν
μλμ°¨ CAD λ° μ€μ΅ μμ μμμ PBL κ΅μνμ΅λ² ν¨κ³Ό μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν.
μ΄ μ΄μ¨ν μ λ μνμ λν P μ±λ MOSFETμ μ κΈ°μ νΉμ± λ³ν μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν.
컀μ€ν λΉμ μ μ΄μ©ν μ§λ₯ν κ΅΄/κ°λ¦¬λΉ μ€λ§νΈ μμμ₯ ꡬμΆ
νκ΅κΈ°κ³κ°κ³΅νν.
컀μ€ν λΉμ μ νμ©ν κ°λ¦¬λΉ λ΄ λΆμ°© λ€λͺ¨λ₯ νλ³ Alλͺ¨λΈ κ°λ°
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν
컀μ€ν λΉμ μ νμ©ν κ΅΄ λ΄ λΆμ°© λ€λͺ¨λ₯ νλ³ AI λͺ¨λΈ κ°λ°
νκ΅κΈ°κ³κ°κ³΅νν.
컀μ€ν λΉμ μ νμ©ν κ΅΄ λ΄ λΆμ°© λ€λͺ¨λ₯ νλ³ AI λͺ¨λΈ κ°λ°
νκ΅κΈ°κ³κ°κ³΅νν.
FEM Simulation ν΄μμ ν΅ν μ§κ΅μ΄λ°©μ± μ¬λ£μ λ¬Όμ±μΉ λμΆ
νκ΅κΈ°κ³κ°κ³΅νν.
NMOS 곡μ μ€ Arsenic implant μλμ§ λ³νμ λ°λ₯Έ IDVD curveμ λ³ν
νκ΅κΈ°κ³κ°κ³΅νν.
TCADλ₯Ό μ΄μ©νμ¬ μ΄μμ μΈ NMOSμ 5κ° μ΄μ¨ λνλ NMOS simulation
νκ΅κΈ°κ³κ°κ³΅νν.
TCADλ₯Ό μ΄μ©ν Boron VT implantμ tilt λ³κ²½μ΄ ldvd 컀λΈμ λ―ΈμΉλ μν₯
νκ΅κΈ°κ³κ°κ³΅νν.
TCADλ₯Ό μ΄μ©ν νμ° μκ°μ λ°λ₯Έ NMOSFET μ€κ³
νκ΅κΈ°κ³κ°κ³΅νν.
TCADλ₯Ό ν΅ν Transistor μ€κ³ λ° μ΄μ¨ λλμ λ°λ₯Έ μ κΈ°μ νΉμ± νκ°
νκ΅κΈ°κ³κ°κ³΅νν.
TO-247 Package Terminal Strength Testμ λν μμΉ ν΄μ μ°κ΅¬
νκ΅κΈ°κ³κ°κ³΅νν.
2000λ μ΄ν κ΅λ΄ AGV λ°μ μ¬λ‘ μ‘°μ¬
λνκΈ°κ³νν λΆμ°μ§ν μΆκ³νμ λν.
3D νλ¦°ν°λ‘ μΆλ ₯ν κΈ°μ΄ κΈ°λ° μ€λ§νΈ ν λ¬Έ μλ κ°ν ꡬ쑰
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
Azure ν΄λΌμ°λ κΈ°λ° νκ²½ λͺ¨λν°λ§ λ°μν Web App κ°λ°
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
PLAμ μ΄νμ λ°λ₯Έ μ ννμ± λ° μ΄νμ± λͺ¨λΈ λΉκ΅
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
SiC μΌνΈν€ λ°°λ¦¬μ΄ λ€μ΄μ€λμ μλ νκ²½μ λ°λ₯Έ μμ΄μ΄ μλ ₯ ν΄μ
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
κ΅λ΄ μ€λ§νΈνμ°μ€ μ°κ΅¬μ¬λ‘λ₯Ό νμ©ν μΈ΅κ°μμ λ¬Έμ ν΄κ²° λ°©μ
λνκΈ°κ³νν λΆμ°μ§ν μΆκ³νμ λν.
κ΅λ΄ μλμ§ λ° μ μκΈ°κΈ° κ΄λ ¨ μ€λ§νΈνμ°μ€ μ‘°μ¬
λνκΈ°κ³νν λΆμ°μ§ν μΆκ³νμ λν.
λμ§νΈ νΈμ λͺ¨λΈμ μν SiC μΌνΈν€ λ² λ¦¬μ΄ λ€μ΄μ€λμ λ±κ° μ νλ₯ μ°μΆ
λνκΈ°κ³νν λΆμ°μ§ν μΆκ³νμ λν.
μ°λͺ¨λ₯Ό μν LED κΈ°λ° IoT κ°μ± μ‘°λͺ κΈ°κΈ°
λνκΈ°κ³νν λΆμ°μ§ν μΆκ³νμ λν.
μλμ΄λ Έ κΈ°λ° μ€λ§νΈν λ―Έλμ΄μ² IoT μλΉμ€ μ€κ³ λ° κ΅¬ν
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
μλμ΄λ Έλ₯Ό μ΄μ©ν μ€μκ° μ΄ν νκ²½ λ°μ΄ν° μμ§
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
μμμ₯ νλ½μ νκ²½ λ°μ΄ν° κΈ°λ° κ°μ²΄κ΅΄ μ±μ₯λ₯ λΉ λ°μ΄ν° λΆμ
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
μ΄λμ± ν₯μμ μν 3D νλ¦°ν λͺ¨λν μ€λ§νΈ ν ꡬμΆ
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
μΈμμ μΈ μ 보μ λ¬κ³Ό μν΅μ μ€ννλ λ°μν Web κ°λ°
μΆκ³ νκ΅κΈ°κ³κ°κ³΅νν.
3D νλ¦°νΈλ PLA μνΈμ μ΄νμ λ°λ₯Έ κΈ°κ³μ λ¬Όμ± νκ°
νκ΅κΈ°κ³κ°κ³΅νν.
FDMμΌλ‘ μ μλ ABSμ PLA μνΈμ μ΄νμ λ°λ₯Έ κΈ°κ³μ λ¬Όμ±
--
FFFμΌλ‘ μ μλ PLAμ μ΄νμ λ°λ₯Έ μ ννμ±κ³μμ νκ°
νκ΅μ 보ν΅μ νν μ’ ν©νμ λν.
μμ μ΄μ₯ νκ²½ λ°μ΄ν° λΆμμ μν IoT κΈ°λ° Big-data μμ€ν μ€κ³ λ° κ΅¬ν
νκ΅μ 보ν΅μ νν μ’ ν©νμ λν.
μμμ₯ νκ²½ λͺ¨λν°λ§μ μν ν΄λΌμ°λ κΈ°λ° λΉ λ°μ΄ν° μΈ‘μ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νν.
μΊ‘μ€ν€ λμμΈμΌλ‘ ꡬνν ν΄λΌμ°λ κΈ°λ° μ€μκ° λͺ¨λν°λ§ λ°μν μΉ
νκ΅μ 보ν΅μ νν μ’ ν©νμ λν.
3D μ€μΊλμ 3D νλ¦°ν°λ₯Ό νμ©ν μκ°λ½ λ³΄νΈ μ₯λΉ
μΆκ³νν νκ΅κΈ°κ³κ°κ³΅νν
3D νλ¦°ν°λ‘ μ μλ λ°λͺ© λ³΄νΈ μ₯λΉμ λν ꡬ쑰ν΄μ
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν.
3D νλ¦°ν°λ‘ μ μλ μκ°λ½ λ³΄νΈ μ₯λΉμ λν ꡬ쑰ν΄μ
λνκΈ°κ³νν λΆμ°μ§λΆ μΆκ³νμ λν.
ANNsκ³Ό FTIRμ μ΄μ©ν 3D νλ¦°ν°λ‘ μ μλ PLA μ΄ν κ²ν
λνκΈ°κ³νν λΆμ°/κ²½λ¨μ§ν.
FTIRκ³Ό μΈκ³΅μ κ²½λ§μ μ΄μ©ν 3D νλ¦°νΈ μ νμ μ΄ν ꡬλΆλ²
μΆκ³νν νκ΅κΈ°κ³κ°κ³΅νν.
곡νκ³Ό μμ μ μλμ§ μμ μ¬λ‘λ‘ λ³΄λ μΈκ° μ€μ¬ μ¬ν
λνμΈκ°κ³΅νν μΆκ³νμ λν.
μ΄νμ λ°λ₯Έ κ³ λΆμ 3D νλ¦°ν μμ¬μ κΈ°κ³μ νΉμ± νκ°
λνκΈ°κ³νν λΆμ°/κ²½λ¨μ§ν.
μ νμμλ²κ³Ό λ°μνλ©΄λ²μ μ΄μ©ν ν΄λμ© νΈλ μ μννμ μ λν΄μ
νκ΅κΈ°κ³κ°κ³΅νν.
μ νμμλ²κ³Ό μμΈλΆμλ²μ μ΄μ©ν ν΄λμ© νΈλ μ μννμ ꡬ쑰ν΄μ
λνκΈ°κ³νν λΆμ°μ§λΆ μΆκ³νμ λν.
FDM 3D νλ¦°ν μΌλ‘ μΆλ ₯λ PLA μνΈμ μ±μ λ°λμ λ°λ₯Έ κΈ°κ³μ νΉμ± νκ°
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν.
FDM λ°©μμΌλ‘ μ μλ ABS μ¬λ£μ νΌλ‘ νΉμ± νκ°
λνκΈ°κ³νν.
FDM λ°©μμΌλ‘ μ μλ PLA μνΈμ μ±μ λ°λμ λ°λ₯Έ κΈ°κ³μ νΉμ± νκ°
λνκΈ°κ³νν κ²½λ¨/λΆμ°/μΈμ°/ν¬ν.
Keynote presentation - Thermo - echanical properties of 3D printed ABS parts fabricated by fused deposition modelling and vapor smoothing
Ulsan National Institute Of Science Of Technology, Ulsan, South Korea
Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Wire bonding lifetime prediction of LED packages using numerical analysis
18th International InfoConference On Thermal, EuroSimE 2017
Numerical Evaluation of a Portable Hydraulic Hand Pump by using
ICMPT.
Numerical evaluation of ABS parts fabricated by fused deposition modeling and vapor smoothing
PHM Asia Pacific.
Thermo-mechanical properties of 3D printed ABS parts fabricated by fused deposition modelling and vapor smoothing
EuroSimE.
λ°μνλ©΄λ²μ μ΄μ©ν ν¨λμ© μ μμ νΈλ νν λΆνμ μμΉμ νκ°
νκ΅κΈ°κ³κ°κ³΅νν μΆκ³νμ λν.
Corresponding Author : Sung-Uk Zhang - Samsung Electronics "Thermo-mechanical properties of ABS parts fabricated by fused deposition modeling and vapor smoothing"
Samsung Electronics
Analysis of magnetically actuated structures using implicit boundary finite element method
Structural Dynamics And Materials InfoConference
Damage sensing by inverse estimation of electrical resistivity of composite structure
Proceedings of the ASME Design Engineering Technical InfoConference
Portable 8-electrode EIT measurement system
IFMBE Proceedings
Portable 8-electrode EIT measurement system
IFMBE Proceedings
Noise analysis of MREIT at 3T and 11T field strength
Annual International InfoConference of the IEEE Engineering in Medicine and Biology - Proceedings